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SI7464DP-T1-GE3 - Vishay

Description: MOSFETs 200V Vds 20V Vgs PowerPAK SO-8

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SI7464DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SI7464DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SI7464DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7464DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    POWERPAK SO-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    0.45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.8 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    35 ns

SI7464DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7464DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI7464DP-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to derate the output current to 0.8A for optimal reliability and thermal performance.
  • To protect the SI7464DP-T1-GE3 from overvoltage and undervoltage conditions, consider adding a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range.
  • The thermal resistance of the SI7464DP-T1-GE3 package is approximately 120°C/W (junction-to-ambient) and 30°C/W (junction-to-case). Proper thermal design and heat sinking are recommended to ensure reliable operation.

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SI7464DP-T1-GE3 Overview

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Part Image SI7464DP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7464DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET