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SI7465DP-T1-E3 - Vishay

Description: MOSFET P-Ch 60V 3.2A PowerPAK SO8 Vishay SI7465DP-T1-E3 P-channel MOSFET Transistor, 3.2 A, -60 V, 8-Pin SOIC

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SI7465DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7465DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    24.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI7465DP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7465DP-T1-E3 is a standard SO-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN81142.
  • To ensure proper soldering, follow the recommended soldering profile and use a solder with a melting point below 260°C. Avoid excessive soldering temperatures and times to prevent damage to the device.
  • The maximum allowed power dissipation for the SI7465DP-T1-E3 is 1.4W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design.
  • Yes, the SI7465DP-T1-E3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, additional testing and validation may be required for specific applications.
  • To prevent ESD damage, handle the SI7465DP-T1-E3 with ESD-protective equipment and follow proper ESD handling procedures. The device has an HBM ESD rating of 2kV and a CDM ESD rating of 1kV.

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SI7465DP-T1-E3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI746, or try a keyword search, such as Power Field-Effect Transistors

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