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SI7540ADP-T1-GE3 - Vishay

Description: Dual MOSFET, Complementary N and P Channel, 20V, 12A, -20V, 9A, -55 to +150°C, PowerPAK SO, Surface Mount

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SI7540ADP-T1-GE3 - Vishay PCB footprint - Other - Other - SI7540ADP-T1-GE3-5
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SI7540ADP-T1-GE3 - Vishay  - 3D model - Other - SI7540ADP-T1-GE3-5
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SI7540ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7540ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany, Usa

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7540ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to the application note AN-1152 for more details.
  • The device requires a stable input voltage (VIN) and a proper biasing of the gate-source voltage (VGS) to ensure optimal performance. A voltage regulator and a voltage divider network can be used to achieve this. Refer to the application note AN-1153 for more details.
  • The device is sensitive to electrostatic discharge (ESD). It is recommended to use ESD protection devices such as TVS diodes or ESD arrays at the input and output pins to prevent damage. Handling the device with ESD-safe materials and following proper handling procedures is also essential.
  • Yes, the SI7540ADP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, it is essential to review the device's qualification data and perform additional testing as required by the specific application.
  • The device has a maximum junction temperature (TJ) of 150°C. Thermal derating is required to ensure the device operates within the specified temperature range. A thermal derating curve is provided in the datasheet to help designers estimate the maximum power dissipation at different ambient temperatures.

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SI7540ADP-T1-GE3 Overview

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