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SI7615ADN-T1-GE3 - Vishay

Description: SI7615ADN-T1-GE3 P-Channel MOSFET, 35 A, 20 V, 8-Pin PowerPAK 1212 Vishay

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SI7615ADN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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SI7615ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7615ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7615ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7615ADN-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 2.9mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI7615ADN-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
  • To protect the SI7615ADN-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range (2.5V to 5.5V).
  • The thermal derating curve for the SI7615ADN-T1-GE3 is typically 1.5mA/°C above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current should be reduced by 1.5mA to prevent overheating.

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SI7615ADN-T1-GE3 Overview

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