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SI7619DN-T1-GE3 - Vishay

Description: Vishay SI7619DN-T1-GE3 P-channel MOSFET Transistor, 23.8 A, -30 V, 8-Pin PowerPAK 1212

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Symbol
SI7619DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7619DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single_2
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3D Models
SI7619DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK 1212-8 Single_2
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SI7619DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7619DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10.5 A

  • Drain-source On Resistance-Max:

    0.021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    27.8 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7619DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7619DN-T1-GE3 is a standard QFN-16 package with a 3x3 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note 'QFN-16 Land Pattern' (document number: 81011).
  • To ensure proper soldering, follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60-90 seconds, and time above 183°C 150-210 seconds. Use a solder with a melting point below 217°C. Refer to the Vishay Intertechnologies application note 'Soldering Profile for QFN Packages' (document number: 81012) for more information.
  • The SI7619DN-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device can be stored at temperatures between -55°C and 150°C. It's essential to follow the recommended operating conditions to ensure the device's reliability and performance.
  • Handle the SI7619DN-T1-GE3 by the body only, avoiding touching the leads or any electrical contacts. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage. Store the devices in their original packaging or an anti-static bag to prevent damage during transportation and storage.
  • The recommended power-up sequence for the SI7619DN-T1-GE3 is to apply the power supply voltage (VCC) before the input signals. Ensure that the input signals are stable and within the recommended operating conditions before applying VCC. This sequence helps prevent unwanted device behavior and ensures proper operation.

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SI7619DN-T1-GE3 Overview

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