HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
ECCN Code:
EAR99
Factory Lead Time:
19 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
20 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
20 V
Drain Current-Max (ID):
35 A
Drain-source On Resistance-Max:
0.0038 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Pulsed Drain Current-Max (IDM):
80 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SI7623DN-T1-GE3 Frequently Asked Questions (FAQs)
Vishay recommends a PCB layout with a thermal pad connected to a large copper area to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a heat sink.
To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its specified operating temperature range.
The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
Yes, the SI7623DN-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's capabilities.
To protect the device from ESD, it's recommended to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices in the circuit.
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SI7623DN-T1-GE3 Overview
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