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SI7655ADN-T1-GE3 - Vishay

Description: VISHAY - SI7655ADN-T1-GE3 - Power MOSFET, P Channel, 20 V, 40 A, 0.003 ohm, PowerPAK 1212, Surface Mount

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SI7655ADN-T1-GE3 - Vishay PCB footprint - Other - Other - SI7655ADN-T1-GE3-3
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SI7655ADN-T1-GE3 - Vishay  - 3D model - Other - SI7655ADN-T1-GE3-3
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SI7655ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7655ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, 1212-8S, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7655ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7655ADN-T1-GE3 should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating guidelines for the device. Additionally, consider using a thermal interface material with a high thermal conductivity.
  • The SI7655ADN-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Use an ESD wrist strap or mat, handle the device by the body or pins, and avoid touching the pins or die. Store the device in an anti-static bag or container.
  • The SI7655ADN-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the JAN, JANTX, or JANS versions.
  • Follow the recommended soldering and rework conditions outlined in the Vishay Intertechnologies application note AN10395. Use a soldering iron with a temperature range of 250°C to 260°C, and limit the soldering time to 3 seconds or less.

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SI7655ADN-T1-GE3 Overview

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