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SI7716ADN-T1-GE3 - Vishay

Description: N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212 Vishay

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SI7716ADN-T1-GE3 - Vishay PCB footprint - Other - Other - SI7716ADN-T1-GE3-2
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SI7716ADN-T1-GE3 - Vishay  - 3D model - Other - SI7716ADN-T1-GE3-2
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SI7716ADN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7716ADN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27.7 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7716ADN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout and land pattern for the SI7716ADN-T1-GE3 can be found in the Vishay Intertechnologies application note AN81142. It provides guidelines for optimal performance, including pad sizes, spacing, and thermal considerations.
  • To ensure reliable operation across the full temperature range, it's essential to follow the recommended operating conditions, including voltage, current, and power dissipation. Additionally, consider using thermal management techniques, such as heat sinks or thermal interfaces, to maintain a stable junction temperature.
  • The SI7716ADN-T1-GE3 has built-in ESD protection, but it's still important to follow proper handling and assembly procedures to prevent damage. For latch-up prevention, ensure that the device is operated within the recommended voltage and current ranges, and consider using latch-up protection circuits if necessary.
  • The SI7716ADN-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using devices with specific screening and qualification, such as the JAN, JANTX, or JANS versions.
  • To prevent damage and ensure long-term reliability, store the SI7716ADN-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps, mats, or bags to prevent ESD damage.

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SI7716ADN-T1-GE3 Overview

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