Part Image

SI7738DP-T1-GE3 - Vishay

Description: MOSFET 150V Vds 20V Vgs PowerPAK SO-8

Download SI7738DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7738DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1
click to zoom
3D Models
SI7738DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1
click to zoom

SI7738DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7738DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7738DP-T1-GE3 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, avoid overheating, and follow the recommended operating temperature range (-55°C to 175°C). Also, consider derating the device's power handling at higher temperatures.
  • Handle the device with ESD-protective equipment and follow standard ESD handling procedures. The device has built-in ESD protection, but it's not a substitute for proper handling and storage precautions.
  • The SI7738DP-T1-GE3 is a commercial-grade device, not specifically designed for high-reliability or aerospace applications. For such applications, consider using devices with higher reliability ratings, such as those with a 'Q' or 'M' prefix.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30 seconds maximum. For rework, use a low-temperature soldering iron and avoid applying excessive heat or force.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7738DP-T1-GE3 Overview

Use the download button to access the SI7738DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI773, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7738DP-T1-GE3

Showing 0 results