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SI7804DN-T1-E3 - Vishay

Description: Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 T/R

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SI7804DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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SI7804DN-T1-E3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2
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SI7804DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7804DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.0185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.5 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7804DN-T1-E3 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to have a solid copper plane under the device, with multiple vias to the inner layers to dissipate heat. The datasheet provides a recommended land pattern, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.
  • To ensure proper soldering, follow the recommended soldering profile provided in the datasheet. Use a solder with a melting point below 260°C, and avoid applying excessive heat or force during the soldering process. Inspect the solder joints under a microscope to ensure they are free of defects.
  • While the datasheet specifies the recommended operating voltage range, it's essential to note that the absolute maximum rating for the input pins is 20V. Exceeding this voltage can cause permanent damage to the device.
  • To prevent electrostatic discharge (ESD) damage, handle the devices with ESD-protective materials, such as wrist straps, mats, or bags. Ensure that the assembly line and storage areas are ESD-protected, and follow proper handling procedures to minimize the risk of ESD damage.
  • Store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. The recommended storage temperature range is -40°C to 125°C, and the relative humidity should be below 60%. Avoid exposing the devices to mechanical stress or vibration during storage.

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SI7804DN-T1-E3 Overview

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Part Image SI7804DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET