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SI7818DN-T1-GE3 - Vishay

Description: MOSFET 150V Vds 20V Vgs PowerPAK 1212-8

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SI7818DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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SI7818DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® 1212-8 Single_2
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SI7818DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7818DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7818DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, with multiple vias to the bottom layer to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C. Apply a small amount of solder paste to the pads, and use a reflow oven or a hot air gun to solder the device. Avoid overheating or applying excessive force, which can damage the device.
  • The maximum allowed voltage on the input pins is 20V, with a recommended operating range of 10V to 18V. Exceeding this voltage may damage the device.
  • To handle ESD protection, ensure that the device is handled in an ESD-safe environment, and use ESD-protective packaging and materials. During assembly, use an ESD wrist strap or mat to prevent static discharge.
  • The recommended storage condition for the device is in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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SI7818DN-T1-GE3 Overview

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Part Image SI7818DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7818DN-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7818DN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET