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SI7846DP-T1-E3 - Vishay

Description: VISHAY - SI7846DP-T1-E3 - MOSFET, N CHANNEL, 150V, 0.041OHM, 4A, POWERPAK SO, FULL REEL

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PCB Footprints
SI7846DP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7846DP-T1-E3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7846DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7846DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

SI7846DP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7846DP-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the input and output pins are not overloaded, and the device is operated within the recommended temperature range.
  • The maximum allowed power dissipation for the SI7846DP-T1-E3 is 1.4W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • The SI7846DP-T1-E3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when operating in high-temperature environments. Ensure proper heat sinking and thermal management to prevent overheating.
  • To troubleshoot issues with the SI7846DP-T1-E3, start by verifying the input voltage, output voltage, and current consumption. Check for proper PCB layout, decoupling, and thermal management. If issues persist, consult the datasheet and application notes or contact Vishay Intertechnologies' technical support for further assistance.

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SI7846DP-T1-E3 Overview

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Part Image SI7846DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET