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SI7850ADP-T1-GE3 - Vishay

Description: VISHAY - SI7850ADP-T1-GE3 - MOSFET, N-CH, 60V, 12A, POWERPAK SO

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SI7850ADP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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SI7850ADP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7850ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7850ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11.3 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35.7 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    55 ns

SI7850ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout and land pattern for the SI7850ADP-T1-GE3 can be found in the Vishay Intertechnologies application note AN10343. It provides detailed guidelines for PCB design, including pad sizes, spacing, and thermal considerations.
  • To ensure reliable operation across the full temperature range, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance. Additionally, ensure that the device is operated within its specified power ratings and that the PCB is designed to minimize thermal gradients.
  • The recommended soldering and rework conditions for the SI7850ADP-T1-GE3 can be found in the Vishay Intertechnologies application note AN10273. It provides detailed guidelines for soldering, desoldering, and rework, including temperature profiles, soldering times, and recommended soldering techniques.
  • To prevent ESD damage, handle the SI7850ADP-T1-GE3 in an ESD-controlled environment, using ESD-protective packaging, wrist straps, and mats. Store the device in its original packaging or in a conductive bag, and avoid touching the device's pins or leads.
  • The SI7850ADP-T1-GE3 has an MSL rating of 3, which means it can be exposed to a relative humidity of 60% at 30°C for up to 168 hours. To prevent moisture-related damage, ensure that the device is stored in a dry environment, and follow the recommended baking procedures before reflow soldering.

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SI7850ADP-T1-GE3 Overview

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