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SI7850DP-T1-GE3 - Vishay

Description: VISHAY - SI7850DP-T1-GE3. - N CHANNEL MOSFET, 60V, 10.3A, SOIC, FULL

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SI7850DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SI7850DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SI7850DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7850DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    POWERPAK, SO-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6.2 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.8 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    74 ns

  • Turn-on Time-Max (ton):

    40 ns

SI7850DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7850DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the input pins (VIN and VOUT) to a stable voltage source, and decouple the input and output pins with 10uF and 1uF capacitors, respectively. Additionally, ensure the input voltage is within the recommended operating range of 4.5V to 18V.
  • The SI7850DP-T1-GE3 has an operating temperature range of -40°C to 150°C. However, for optimal performance and reliability, it is recommended to operate the device within a temperature range of -20°C to 125°C.
  • To protect the SI7850DP-T1-GE3 from overvoltage and overcurrent conditions, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to your design. You can also use a voltage regulator with built-in OVP and OCP features.
  • To minimize EMI and noise, keep the input and output traces as short as possible, and use a ground plane to reduce radiation. Avoid routing sensitive signals near the device, and use shielding or guard rings to reduce electromagnetic interference.

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SI7850DP-T1-GE3 Overview

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