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SI7860ADP-T1-E3 - Vishay

Description: MOSFET N-CH 30V 11A PPAK SO-8

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SI7860ADP-T1-E3 - Vishay PCB footprint - Other - Other - SI7860ADP-T1-E3-4
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SI7860ADP-T1-E3 - Vishay  - 3D model - Other - SI7860ADP-T1-E3-4
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SI7860ADP-T1-E3 Details

  • Manufacturer Part Number:

    SI7860ADP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4.8 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7860ADP-T1-E3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the package to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the ambient temperature.
  • The recommended soldering conditions for the SI7860ADP-T1-E3 are a peak temperature of 260°C, a dwell time above 217°C of 30 seconds, and a total process time of 60-90 seconds.
  • To handle ESD protection during handling and assembly, it's recommended to use an ESD wrist strap, mat, or workstation, and to follow proper handling and storage procedures to prevent damage from electrostatic discharge.
  • The SI7860ADP-T1-E3 has an MSL rating of 3, which means it can be exposed to a maximum of 168 hours of moisture before soldering. This requires proper storage and handling procedures to prevent moisture absorption and damage during assembly.

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SI7860ADP-T1-E3 Overview

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