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SI7860DP-T1-E3 - Vishay

Description: MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3

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PCB Footprints
SI7860DP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
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3D Models
SI7860DP-T1-E3 - Vishay  - 3D model - Other - PowerPAK SO-8
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SI7860DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7860DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, POWERPAK, SO-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7860DP-T1-E3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the package to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the ambient temperature.
  • The recommended soldering conditions for the SI7860DP-T1-E3 are a peak temperature of 260°C, a dwell time of 10-30 seconds, and a soldering process that follows the IPC J-STD-020D standard.
  • To handle ESD protection during handling and assembly, it's recommended to follow proper ESD handling procedures, use ESD-protective packaging and materials, and ensure that all personnel handling the devices are grounded using wrist straps or mats.
  • The SI7860DP-T1-E3 has an MSL rating of 3, which means it can be exposed to a maximum of 168 hours of moisture before soldering. This requires proper storage and handling procedures to prevent moisture absorption, and baking the devices according to the manufacturer's recommendations if they are exposed to moisture for an extended period.

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SI7860DP-T1-E3 Overview

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