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SI7884BDP-T1-GE3 - Vishay

Description: VISHAY - SI7884BDP-T1-GE3 - MOSFET, N CH, 40V, 58A, POWERPAK

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SI7884BDP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
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SI7884BDP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8
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SI7884BDP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7884BDP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    54 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    142 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    77 ns

  • Turn-on Time-Max (ton):

    66 ns

SI7884BDP-T1-GE3 Frequently Asked Questions (FAQs)

  • For optimal performance, it is recommended to follow a 2-layer or 4-layer PCB layout with a solid ground plane, and to use thermal vias to dissipate heat. A minimum of 1 oz copper thickness is recommended. Additionally, a thermal pad on the bottom of the package should be connected to a solid ground plane to improve thermal dissipation.
  • To ensure proper biasing, it is recommended to follow the recommended operating conditions outlined in the datasheet. This includes setting the input voltage (VIN) to the recommended range of 4.5V to 5.5V, and ensuring the output voltage (VOUT) is set to the desired level using the feedback resistors. Additionally, it is recommended to decouple the input and output with ceramic capacitors to reduce noise and ripple.
  • The recommended input capacitor is a 10uF ceramic capacitor with an X7R or X5R dielectric, and the recommended output capacitor is a 22uF ceramic capacitor with an X7R or X5R dielectric. These capacitors should be placed as close to the device as possible to minimize parasitic inductance.
  • To protect the device from overvoltage and undervoltage conditions, it is recommended to use a voltage supervisor or a voltage monitor IC to detect and respond to voltage faults. Additionally, a TVS (Transient Voltage Suppressor) diode can be used to protect the device from voltage transients and spikes.
  • To minimize EMI, it is recommended to use a common-mode choke or a ferrite bead in series with the input and output lines. Additionally, a capacitor can be placed between the input and output lines to filter out high-frequency noise.

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SI7884BDP-T1-GE3 Overview

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Part Image SI7884BDP-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 58A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7884BDP-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 58A I(D), 40V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET