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SI7892BDP-T1-E3 - Vishay

Description: MOSFETs 30V 25A 0.0042Ohm

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SI7892BDP-T1-E3 - Vishay - PCB symbol
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SI7892BDP-T1-E3 - Vishay PCB footprint - Other - Other - Power PAK SO-8 Single
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SI7892BDP-T1-E3 - Vishay - 3D model - Other - Power PAK SO-8 Single
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SI7892BDP-T1-E3 Details

  • Manufacturer Part Number:

    SI7892BDP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7892BDP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7892BDP-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage on the input pins of the SI7892BDP-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, the SI7892BDP-T1-E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI).
  • To troubleshoot issues with the SI7892BDP-T1-E3, start by verifying the device's pinout and connections. Check for proper power supply, input signals, and output loads. Use oscilloscopes or logic analyzers to monitor signal waveforms and identify potential issues.

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SI7892BDP-T1-E3 Overview

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Part Image SI7892BDP-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET