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SI7898DP-T1-GE3 - Vishay

Description: VISHAY - SI7898DP-T1-GE3 - MOSFET, N CH, 150V, 3A, PPAK SO8

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SI7898DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7898DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7898DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7898DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7898DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7898DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7898DP-T1-GE3 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure optimal thermal performance, ensure a good thermal connection between the MOSFET's thermal pad and the PCB's thermal plane or a heat sink. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
  • The maximum allowed power dissipation for the SI7898DP-T1-GE3 is 2.5W at a junction temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design.
  • While the SI7898DP-T1-GE3 is suitable for high-frequency switching applications, its performance may degrade above 100 kHz due to increased switching losses. Ensure proper PCB design and layout to minimize parasitic inductance and capacitance.
  • Handle the SI7898DP-T1-GE3 with ESD-protective equipment and follow proper ESD-handling procedures. Use an ESD-protective bag or wrapping material during storage and transportation.

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SI7898DP-T1-GE3 Overview

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