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SI7923DN-T1-E3 - Vishay

Description: MOSFET -30V Vds 20V Vgs PowerPAK 1212-8

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SI7923DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK-1212-8 Dual
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SI7923DN-T1-E3 - Vishay  - 3D model - Other - PowerPAK-1212-8 Dual
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SI7923DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7923DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7923DN-T1-E3 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, keeping the PCB traces and vias away from the thermal pad can reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended operating temperature range (up to 150°C) and consider the device's power dissipation. Implementing thermal management techniques, such as heat sinks or thermal interfaces, can help maintain a safe operating temperature.
  • The SI7923DN-T1-E3 has built-in ESD protection, but it is still important to follow proper ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
  • Yes, the SI7923DN-T1-E3 is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101, which ensures the device's performance and reliability in harsh environments. However, it is essential to follow the recommended operating conditions and design guidelines to ensure the device's reliability in these applications.
  • To troubleshoot issues with the device's output voltage regulation, start by verifying the input voltage, output voltage, and load current. Check for any signs of overheating, and ensure that the device is properly soldered and connected to the PCB. If the issue persists, consult the datasheet and application notes for guidance on troubleshooting and debugging.

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SI7923DN-T1-E3 Overview

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Part Image SI7923DN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7923DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET