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SI7923DN-T1-GE3 - Vishay

Description: VISHAY - SI7923DN-T1-GE3 - Dual MOSFET, P Channel, 30 V, 6.4 A, 0.075 ohm, PowerPAK 1212, Surface Mount

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SI7923DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8_2022-1
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SI7923DN-T1-GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8_2022-1
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SI7923DN-T1-GE3 Details

  • Manufacturer Part Number:

    SI7923DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7923DN-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7923DN-T1-GE3 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the datasheet's thermal derating curve.
  • The SI7923DN-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap, mat, or workstation, and follow standard ESD handling procedures to prevent damage.
  • Yes, the SI7923DN-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed, and the PCB layout is optimized for high-frequency operation. Additionally, consider the device's switching characteristics, such as rise and fall times, to ensure reliable operation.
  • Follow the recommended soldering and rework conditions outlined in the datasheet, including peak temperatures, soldering times, and rework techniques. Ensure that the device is not exposed to excessive temperatures or mechanical stress during the soldering process.

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SI7923DN-T1-GE3 Overview

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Part Image SI7923DN-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7923DN-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET