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SI7949DP-T1-E3 - Vishay

Description: MOSFET -60V Vds 20V Vgs PowerPAK SO-8

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SI7949DP-T1-E3 - Vishay PCB footprint - Other - Other - SI7949DP-T1-E3-3
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SI7949DP-T1-E3 - Vishay  - 3D model - Other - SI7949DP-T1-E3-3
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SI7949DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7949DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    24.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI7949DP-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7949DP-T1-E3 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling according to the temperature derating curve provided in the datasheet.
  • The SI7949DP-T1-E3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage to the device.
  • The SI7949DP-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices. For high-reliability or aerospace applications, consider using a device specifically designed and qualified for those markets, such as the Vishay's MIL-PRF-19500 or ESCC-qualified devices.
  • Follow standard surface-mount technology (SMT) assembly techniques, using a soldering iron with a temperature of 260°C (500°F) or less. Ensure the device is properly aligned and seated on the PCB, and use a solder paste with a melting point of 217°C (423°F) or higher.

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SI7949DP-T1-E3 Overview

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Part Image SI7949DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET