HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Country Of Origin:
Israel
ECCN Code:
EAR99
Factory Lead Time:
28 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5
Avalanche Energy Rating (Eas):
24.2 mJ
Case Connection:
DRAIN
Configuration:
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
3.2 A
Drain-source On Resistance-Max:
0.064 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XDSO-C6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
3.5 W
Pulsed Drain Current-Max (IDM):
25 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Transistor Element Material:
SILICON
SI7949DP-T1-GE3 Frequently Asked Questions (FAQs)
For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a thermal relief pattern under the device. A minimum of 2 oz copper thickness is recommended. Additionally, ensure that the PCB has a solid ground plane to help dissipate heat.
To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Use a stable voltage source and decouple the device with a 10uF capacitor in parallel with a 100nF capacitor. Additionally, ensure the device is operated within the recommended temperature range.
The SI7949DP-T1-GE3 is a sensitive device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and ensure all equipment is grounded. Avoid touching the device pins or handling the device in a way that could generate static electricity.
The SI7949DP-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper design, testing, and validation. However, it is essential to consult with Vishay Intertechnologies or a qualified engineer to ensure the device meets the specific requirements of the application.
The thermal resistance (RθJA) is typically 25°C/W, and the junction-to-case thermal resistance (RθJC) is typically 5°C/W. These values are subject to variation depending on the specific application and PCB design.
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SI7949DP-T1-GE3 Overview
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