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SI7997DP-T1-GE3 - Vishay

Description: Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V

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Symbol
SI7997DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI7997DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Dual
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3D Models
SI7997DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Dual
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SI7997DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7997DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

SI7997DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7997DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple them with a 10uF capacitor to ground. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1kΩ.
  • The SI7997DP-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, it's recommended to operate within -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI7997DP-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure optimal performance and reliability.
  • To prevent ESD damage, handle the SI7997DP-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device pins or handling the device in close proximity to ESD-generating materials.

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SI7997DP-T1-GE3 Overview

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