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SI9433BDY-T1-GE3 - Vishay

Description: MOSFET 20V 6.2A 2.5W 40mohm @ 4.5V

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SI9433BDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead soic
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SI9433BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI9433BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    145 ns

  • Turn-on Time-Max (ton):

    145 ns

SI9433BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9433BDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, and follow the recommended PCB layout and design guidelines.
  • The maximum allowed power dissipation for the SI9433BDY-T1-GE3 is dependent on the ambient temperature and the thermal resistance of the package. Refer to the datasheet for the power dissipation curves and thermal resistance values to determine the maximum allowed power dissipation for your specific application.
  • Yes, the SI9433BDY-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is operated within its recommended frequency range.
  • To protect the SI9433BDY-T1-GE3 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.

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SI9433BDY-T1-GE3 Overview

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