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SI9926CDY-T1-E3 - Vishay

Description: Mosfet Array 20V 8A 3.1W Surface Mount 8-SOIC

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SI9926CDY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI9926CDY-T1-E3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI9926CDY-T1-E3 Details

  • Manufacturer Part Number:

    SI9926CDY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    100 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    40 ns

SI9926CDY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9926CDY-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm. Additionally, the input capacitor should be at least 1uF with an ESR of 0.1 ohm.
  • The maximum junction temperature for the SI9926CDY-T1-E3 is 150°C. It is recommended to keep the junction temperature below 125°C for optimal performance and reliability.
  • Yes, the SI9926CDY-T1-E3 is rated for operation up to 125°C. However, it is recommended to derate the output current and input voltage to ensure reliable operation in high-temperature environments.
  • The power dissipation of the SI9926CDY-T1-E3 can be calculated using the formula: Pd = (Vin - Vout) x Iout + (Vin x Iq), where Vin is the input voltage, Vout is the output voltage, Iout is the output current, and Iq is the quiescent current.

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SI9926CDY-T1-E3 Overview

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