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SI9926CDY-T1-GE3 - Vishay

Description: VISHAY - SI9926CDY-T1-GE3 - MOSFET, DUAL, N-CH, 20V, 8A, NSOIC-8

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SI9926CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI9926CDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI9926CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI9926CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    100 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    40 ns

SI9926CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9926CDY-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN81105.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note AN81105. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
  • The SI9926CDY-T1-GE3 is rated for operation from -40°C to 150°C. However, it's recommended to derate the device's power dissipation according to the ambient temperature to ensure reliable operation.
  • Yes, the SI9926CDY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is PPAP capable. However, it's essential to consult with Vishay Intertechnologies' application engineers to ensure the device meets the specific requirements of your application.
  • To prevent ESD damage, handle the SI9926CDY-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a conductive bag or tube to prevent static buildup.

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SI9926CDY-T1-GE3 Overview

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