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SI9933CDY-T1-GE3 - Vishay

Description: SI9933CDY-T1-GE3, Dual P-channel MOSFET Transistor 3.6A 20V, 8-Pin SOIC

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SI9933CDY-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI9933CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI9933CDY-T1-GE3 - Vishay - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI9933CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI9933CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1.8 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    115 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    PURE MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    64 ns

  • Turn-on Time-Max (ton):

    107 ns

SI9933CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9933CDY-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure proper biasing, the SI9933CDY-T1-GE3 requires a supply voltage (VCC) between 2.5V and 5.5V, and a bias current (IB) of 1mA to 10mA. The device should be operated within the recommended operating conditions specified in the datasheet.
  • The maximum power dissipation of the SI9933CDY-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, the device's power dissipation should be derated for higher ambient temperatures to prevent overheating.
  • The SI9933CDY-T1-GE3 is a general-purpose N-channel MOSFET, and its frequency response is limited to around 100 kHz. For high-frequency applications, a more specialized MOSFET or a different device type may be required.
  • The safe operating area (SOA) of the SI9933CDY-T1-GE3 is defined by the maximum drain-source voltage (VDS) of 30V, maximum drain current (ID) of 3.5A, and maximum power dissipation of 1.4W. Operating the device outside of these limits can reduce its reliability and lifespan.

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SI9933CDY-T1-GE3 Overview

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