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SI9945BDY-T1-GE3 - Vishay

Description: Vishay SI9945BDY-T1-GE3 Dual N-channel MOSFET Transistor, 5.3 A, 60 V, 8-Pin SOIC

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SI9945BDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI9945BDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    6.1 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    125 ns

SI9945BDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI9945BDY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI9945BDY-T1-GE3 operates within its SOA, monitor the device's junction temperature, voltage, and current. Ensure the device is operated within the recommended voltage range (4.5 V to 18 V) and current range (up to 2 A).
  • The thermal resistance (RθJA) of the SI9945BDY-T1-GE3 is 125°C/W, and the thermal resistance (RθJC) is 45°C/W.
  • Yes, the SI9945BDY-T1-GE3 is suitable for high-reliability applications due to its robust design, high-temperature rating, and compliance with automotive and industrial standards.
  • To prevent electrostatic discharge (ESD) damage, handle the SI9945BDY-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in a way that could generate static electricity.

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SI9945BDY-T1-GE3 Overview

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Part Image SI9945BDY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 5.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA