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SIA430DJT-T1-GE3 - Vishay

Description: MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70

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SIA430DJT-T1-GE3 Details

  • Manufacturer Part Number:

    SIA430DJT-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19.2 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    40 ns

SIA430DJT-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA430DJT-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Handle the SIA430DJT-T1-GE3 with an anti-static wrist strap, mat, or other ESD protection devices. Avoid touching the component's pins or leads, and use ESD-safe packaging and storage materials.
  • The maximum allowable voltage for the SIA430DJT-T1-GE3 is 30V, as specified in the datasheet. Exceeding this voltage may cause permanent damage to the component.
  • The SIA430DJT-T1-GE3 is rated for operation up to 150°C. However, it's essential to consider the component's power dissipation and thermal resistance when operating in high-temperature environments to avoid overheating and ensure reliable operation.
  • The recommended soldering profile for the SIA430DJT-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. It's essential to follow the recommended soldering profile to avoid damaging the component.

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SIA430DJT-T1-GE3 Overview

Use the download button to access the SIA430DJT-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIA43, or try a keyword search, such as Power Field-Effect Transistors

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