HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Country Of Origin:
USA
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5
Avalanche Energy Rating (Eas):
8.5 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
12 A
Drain-source On Resistance-Max:
0.047 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PDSO-N3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
19 W
Pulsed Drain Current-Max (IDM):
30 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIA441DJ-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage condition for SIA441DJ-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
Yes, SIA441DJ-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.
To prevent ESD damage, handle SIA441DJ-T1-GE3 with anti-static wrist straps, mats, or bags, and ensure a grounded workstation. Avoid touching the component's pins or leads.
The recommended soldering profile for SIA441DJ-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a preheat temperature of 150-200°C.
Yes, SIA441DJ-T1-GE3 is AEC-Q101 qualified, making it suitable for automotive applications, including engine control units, infotainment systems, and advanced driver-assistance systems.
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SIA441DJ-T1-GE3 Overview
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