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SIA449DJ-T1-GE3 - Vishay

Description: Vishay SIA449DJ-T1-GE3 P-channel MOSFET Transistor, 10.4 A, -30 V, 6-Pin SC-70

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SIA449DJ-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIA449DJ-T1-GE3 - Vishay PCB footprint - Other - Other - SIA449DJ-T1-GE3-2
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SIA449DJ-T1-GE3 - Vishay - 3D model - Other - SIA449DJ-T1-GE3-2
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SIA449DJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA449DJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIA449DJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA449DJ-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • While SIA449DJ-T1-GE3 has a high junction temperature rating of 150°C, it's essential to consider the thermal resistance and power dissipation when operating in high-temperature environments. Consult with a thermal expert or perform thorough thermal analysis to ensure safe operation.
  • To prevent electrostatic discharge (ESD) damage, handle SIA449DJ-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.
  • The recommended soldering profile for SIA449DJ-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
  • While SIA449DJ-T1-GE3 meets the AEC-Q101 qualification, it's essential to consult with the manufacturer and ensure compliance with specific automotive industry standards and regulations.

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SIA449DJ-T1-GE3 Overview

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