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SIA456DJ-T1-GE3 - Vishay

Description: VISHAY - SIA456DJ-T1-GE3 - MOSFET, N-CH, 200V, 2.6A, SC-70-6

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SIA456DJ-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK-SC-70-6L_Single
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3D Models
SIA456DJ-T1-GE3 - Vishay  - 3D model - Other - PowerPAK-SC-70-6L_Single
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SIA456DJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA456DJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    1.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    75 ns

  • Turn-on Time-Max (ton):

    55 ns

SIA456DJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIA456DJ-T1-GE3 can be found in the Vishay Intertechnologies' application note AN42172, which provides guidelines for PCB layout and land pattern design.
  • The SIA456DJ-T1-GE3 has a thermal resistance of 2.5°C/W. To ensure proper thermal management, it's recommended to use a heat sink with a thermal interface material, and to follow the guidelines outlined in the Vishay Intertechnologies' application note AN10273.
  • The maximum operating temperature range for the SIA456DJ-T1-GE3 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the device's power dissipation accordingly to ensure reliable operation.
  • The SIA456DJ-T1-GE3 is a commercial-grade device, but Vishay Intertechnologies offers a range of high-reliability and aerospace-grade devices that meet specific industry standards, such as MIL-PRF-19500 or ESCC. It's recommended to consult with Vishay's sales team or application engineers to determine the suitability of the SIA456DJ-T1-GE3 or alternative devices for high-reliability or aerospace applications.
  • Vishay Intertechnologies provides guidelines for soldering and assembly in their application note AN42171. It's recommended to follow these guidelines to ensure proper soldering and assembly of the SIA456DJ-T1-GE3.

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