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SIA477EDJT-T1-GE3 - Vishay

Description: MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L

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SIA477EDJT-T1-GE3 - Vishay PCB footprint - Other - Other - SIA477EDJT-T1-GE3-1
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SIA477EDJT-T1-GE3 - Vishay  - 3D model - Other - SIA477EDJT-T1-GE3-1
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SIA477EDJT-T1-GE3 Details

  • Manufacturer Part Number:

    SIA477EDJT-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2016-09-25

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    740 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    240 ns

  • Turn-on Time-Max (ton):

    100 ns

SIA477EDJT-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA477EDJT-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Yes, SIA477EDJT-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.
  • To prevent electrostatic discharge (ESD) damage, handle SIA477EDJT-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper ESD handling procedures.
  • The recommended soldering profile for SIA477EDJT-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a preheat temperature of 150-200°C.
  • Yes, SIA477EDJT-T1-GE3 is compatible with lead-free soldering, but ensure that the soldering process follows the recommended profile to prevent damage.

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SIA477EDJT-T1-GE3 Overview

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