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SIA817EDJ-T1-GE3 - Vishay

Description: MOSFET -30V Vds 12V Vgs PowerPAK SC-70

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SIA817EDJ-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SC-70-6L Dual
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3D Models
SIA817EDJ-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SC-70-6L Dual
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SIA817EDJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA817EDJ-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    6.5 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    65 ns

  • Turn-on Time-Max (ton):

    80 ns

SIA817EDJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIA817EDJ-T1-GE3 is a standard SOD-123 package with a 1.7mm x 1.3mm body size. The recommended land pattern is available in the Vishay Intertechnologies' package outline drawing.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -55°C to 175°C, and that the device is properly soldered and mounted to a heat sink if necessary.
  • The maximum allowable power dissipation for the SIA817EDJ-T1-GE3 is 1.5W at a junction temperature of 25°C. However, this value can be derated based on the operating temperature and other factors, as specified in the datasheet.
  • Yes, the SIA817EDJ-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, the device's performance may degrade at higher frequencies, and additional considerations such as parasitic inductance and capacitance should be taken into account.
  • The SIA817EDJ-T1-GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. During shipping, the devices should be packaged in anti-static bags or tubes to prevent electrostatic discharge damage.

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SIA817EDJ-T1-GE3 Overview

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