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SIB912DK-T1-GE3 - Vishay

Description: MOSFET 20V Vds 8V Vgs PowerPAK SC-75

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SIB912DK-T1-GE3 - Vishay PCB footprint - Other - Other - SIB912DK-T1-GE3-1
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3D Models
SIB912DK-T1-GE3 - Vishay  - 3D model - Other - SIB912DK-T1-GE3-1
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SIB912DK-T1-GE3 Details

  • Manufacturer Part Number:

    SIB912DK-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-75, POWERPAK, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain-source On Resistance-Max:

    0.216 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIB912DK-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature range for the SIB912DK-T1-GE3 is -40°C to 125°C.
  • Yes, the SIB912DK-T1-GE3 is designed for high-reliability applications and meets the requirements of AEC-Q101, making it suitable for automotive and other high-reliability industries.
  • The maximum junction temperature (Tj) for the SIB912DK-T1-GE3 is 175°C.
  • Yes, the SIB912DK-T1-GE3 is RoHS (Restriction of Hazardous Substances) compliant, meeting the EU's directive on the restriction of hazardous substances in electrical and electronic equipment.
  • The thermal resistance (RthJA) of the SIB912DK-T1-GE3 is 40°C/W.

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