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SiC438AED-T1-GE3 - Vishay

Description: Switching Voltage Regulators 3-28V 8A 50uA microBUCK MLP44-24

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SiC438AED-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SiC438AED-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® MLP44-24L
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3D Models
SiC438AED-T1-GE3 - Vishay - 3D model - Other - PowerPAK® MLP44-24L
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SiC438AED-T1-GE3 Details

  • Manufacturer Part Number:

    SIC438AED-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.7

  • Analog IC - Other Type:

    SWITCHING REGULATOR

  • Control Mode:

    VOLTAGE-MODE

  • Control Technique:

    PULSE WIDTH MODULATION

  • Input Voltage-Max:

    28 V

  • Input Voltage-Min:

    4.5 V

  • Input Voltage-Nom:

    12 V

  • JESD-30 Code:

    S-XQCC-N28

  • Length:

    4 mm

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Voltage-Max:

    25.2 V

  • Output Voltage-Min:

    0.6 V

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    VQCCN

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER, VERY THIN PROFILE

  • Seated Height-Max:

    0.8 mm

  • Surface Mount:

    YES

  • Switcher Configuration:

    BUCK

  • Switching Frequency-Max:

    1000 kHz

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Width:

    4 mm

SiC438AED-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIC438AED-T1-GE3 is a standard SOD-123 package footprint with a minimum pad size of 1.5 mm x 1.5 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking and airflow, and ensuring that the device is operated within its specified temperature range.
  • The maximum allowable power dissipation for the SIC438AED-T1-GE3 is 1.5 W at a junction temperature of 150°C. However, it is recommended to derate the power dissipation to ensure reliable operation.
  • Yes, the SIC438AED-T1-GE3 is suitable for high-frequency applications up to 1 GHz. However, it is recommended to evaluate the device's performance in the specific application and consider factors such as parasitic inductance and capacitance.
  • The SIC438AED-T1-GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. It is recommended to handle the device by the body, rather than the leads, to prevent damage and electrostatic discharge.

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SiC438AED-T1-GE3 Overview

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