Part Image

SICW033N120Y4HE3-BP - MCC

Description: SiC MOSFET N-CHANNEL Temperature Range : -55°C to +175°C Drain-Source Voltage 1200V Gate-Source Voltage -8/+19V

Download SICW033N120Y4HE3-BP Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SICW033N120Y4HE3-BP - MCC PCB footprint - Other - Other - TO-247-4_2025-2.1
click to zoom
3D Models
SICW033N120Y4HE3-BP - MCC  - 3D model - Other - TO-247-4_2025-2.1
click to zoom

SICW033N120Y4HE3-BP Details

  • Manufacturer Part Number:

    SICW033N120Y4HE3-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • JESD-609 Code:

    e3

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    10

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SICW033N120Y4HE3-BP Overview

Use the download button to access the SICW033N120Y4HE3-BP schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SICW0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SICW033N120Y4HE3-BP

Showing 0 results