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SICW400N170A-BP - MCC

Description: N-CHANNEL MOSFET -55°C to +175°C : 1.2°C/W Low Capacitance

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PCB Footprints
SICW400N170A-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AB_2023
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3D Models
SICW400N170A-BP - MCC  - 3D model - Transistor Outline, Vertical - TO-247AB_2023
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SICW400N170A-BP Details

  • Manufacturer Part Number:

    SICW400N170A-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6.4

  • Avalanche Energy Rating (Eas):

    259 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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SICW400N170A-BP Overview

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