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SIDR104AEP-T1-RE3 - Vishay

Description: N-Channel 100 V 21.1A (Ta), 90.5A (Tc) 6.5W (Ta), 120W (Tc) Surface Mount PowerPAK® SO-8DC

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SIDR104AEP-T1-RE3 Details

  • Manufacturer Part Number:

    SIDR104AEP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8DC, 8 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    90.5 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    18.5 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    58 ns

SIDR104AEP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIDR104AEP-T1-RE3 is a rectangular pad with dimensions of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder paste with a melting point of 217°C to 220°C. Also, ensure the PCB is clean and free of oxidation.
  • The maximum operating temperature range for the SIDR104AEP-T1-RE3 is -55°C to 150°C, with a derating of 1.33% per °C above 125°C.
  • Yes, the SIDR104AEP-T1-RE3 is designed to withstand high-vibration environments, with a vibration rating of 10 G peak acceleration, 10 Hz to 2000 Hz, per IEC 60068-2-6.
  • To handle ESD protection, use a wrist strap or mat with a resistance of 1 MΩ to 10 MΩ, and ensure the SIDR104AEP-T1-RE3 is stored in an ESD-protective package or bag.

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SIDR104AEP-T1-RE3 Overview

Use the download button to access the SIDR104AEP-T1-RE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIDR1, or try a keyword search, such as Power Field-Effect Transistors

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