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SIDR220DP-T1-GE3 - Vishay

Description: MOSFET 25V Vds 16V Vgs PowerPAK SO-8DC

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SIDR220DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIDR220DP-T1-GE3-2
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SIDR220DP-T1-GE3 - Vishay  - 3D model - Other - SIDR220DP-T1-GE3-2
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SIDR220DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIDR220DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.00082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    720 pF

  • JESD-30 Code:

    R-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    126 ns

  • Turn-on Time-Max (ton):

    290 ns

SIDR220DP-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal relief pattern around the drain pin are also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The SIDR220DP-T1-GE3 has an integrated ESD protection diode, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A minimum of 1 kΩ resistance and 100 pF capacitance in series with the input pins can provide additional ESD protection.
  • Yes, the SIDR220DP-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
  • Store the SIDR220DP-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or pins to prevent damage. Use anti-static packaging and follow standard ESD handling procedures during assembly and testing.

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SIDR220DP-T1-GE3 Overview

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