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SIDR626DP-T1-GE3 - Vishay

Description: MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC

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SIDR626DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIDR626DP-T1-GE3-1
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SIDR626DP-T1-GE3 - Vishay  - 3D model - Other - SIDR626DP-T1-GE3-1
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SIDR626DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIDR626DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SO-8DC, 8 PIN

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    94 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    78 ns

  • Turn-on Time-Max (ton):

    88 ns

SIDR626DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIDR626DP-T1-GE3 is a rectangle with dimensions of 6.1 mm x 3.3 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult the manufacturer's application notes for specific guidance.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink. Proper PCB design, thermal management, and component selection are also essential for reliable operation.
  • The maximum allowable voltage for SIDR626DP-T1-GE3 is 80 V, as specified in the datasheet. However, it's essential to consider the device's voltage derating curve and ensure that the operating voltage is within the recommended range to prevent premature failure.
  • While SIDR626DP-T1-GE3 is suitable for high-frequency switching applications, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the operating frequency is within the recommended range. Consult the datasheet and application notes for specific guidance on high-frequency operation.
  • To ensure ESD protection for SIDR626DP-T1-GE3, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. During PCB assembly, ensure that the device is handled and installed correctly to prevent ESD damage.

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SIDR626DP-T1-GE3 Overview

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