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SIHA100N60E-GE3 - Vishay

Description: MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220

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SIHA100N60E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_2022
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3D Models
SIHA100N60E-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_2022
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SIHA100N60E-GE3 Details

  • Manufacturer Part Number:

    SIHA100N60E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2018-12-13

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    226 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    73 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    106 ns

  • Turn-on Time-Max (ton):

    110 ns

SIHA100N60E-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for SIHA100N60E-GE3 is -40°C to 150°C.
  • Yes, SIHA100N60E-GE3 is designed for high-frequency switching applications up to 100 kHz.
  • The typical turn-on time is around 10-20 ns, and the typical turn-off time is around 50-100 ns.
  • Yes, SIHA100N60E-GE3 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper gate drive and thermal management.
  • The recommended gate resistance for SIHA100N60E-GE3 is around 10-20 ohms to minimize oscillations and ensure stable operation.

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SIHA100N60E-GE3 Overview

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