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SIHA20N50E-GE3 - Vishay

Description: MOSFET 500V N-CH

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SIHA20N50E-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHA20N50E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SIHA24N80AE-GE3
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3D Models
SIHA20N50E-GE3 - Vishay - 3D model - Transistor Outline, Vertical - SIHA24N80AE-GE3
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SIHA20N50E-GE3 Details

  • Manufacturer Part Number:

    SIHA20N50E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    204 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.184 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    146 ns

  • Turn-on Time-Max (ton):

    88 ns

SIHA20N50E-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHA20N50E-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, SIHA20N50E-GE3 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times. However, it's essential to consider the device's thermal performance and ensure proper cooling.
  • To ensure reliability in high-temperature environments, it's crucial to follow the recommended operating conditions, provide adequate cooling, and consider derating the device's power handling capabilities. Additionally, ensure that the device is soldered correctly and the PCB is designed to minimize thermal resistance.
  • Yes, SIHA20N50E-GE3 is compatible with lead-free soldering processes, such as SAC305 (Sn-Ag-Cu) or other lead-free solder alloys. However, it's essential to follow the recommended soldering profile and temperature to ensure reliable connections.
  • The typical gate drive voltage required for SIHA20N50E-GE3 is between 10V to 15V, depending on the specific application and switching frequency. However, it's recommended to consult the datasheet and application notes for more detailed information.

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SIHA20N50E-GE3 Overview

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