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SIHA24N80AE-GE3 - Vishay

Description: MOSFET N-CHANNEL 800V E Series Pwr MOSFET

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SIHA24N80AE-GE3 - Vishay - PCB symbol
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SIHA24N80AE-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SIHA24N80AE-GE3
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SIHA24N80AE-GE3 - Vishay - 3D model - Transistor Outline, Vertical - SIHA24N80AE-GE3
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SIHA24N80AE-GE3 Details

  • Manufacturer Part Number:

    SIHA24N80AE-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    127 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.184 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    160 ns

  • Turn-on Time-Max (ton):

    130 ns

SIHA24N80AE-GE3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for SIHA24N80AE-GE3 is 150°C, as specified in the datasheet. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IGBT's performance and lifespan. Ensure good thermal contact between the IGBT and the heat sink, and use a suitable thermal interface material. Also, consider the airflow and heat sink design to dissipate heat efficiently.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is between 10 ohms to 100 ohms. However, it's essential to consult the datasheet and application notes for more detailed guidance.
  • Yes, SIHA24N80AE-GE3 can be used in a parallel configuration, but it's crucial to ensure that the IGBTs are properly matched and synchronized to avoid uneven current sharing and potential damage.
  • The maximum allowable voltage transient for SIHA24N80AE-GE3 is typically around 10% to 20% above the maximum rated voltage. However, it's recommended to consult the datasheet and application notes for more detailed information on voltage transient tolerance.

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SIHA24N80AE-GE3 Overview

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