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SIHA25N50E-E3 - Vishay

Description: MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

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SIHA25N50E-E3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_
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SIHA25N50E-E3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_
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SIHA25N50E-E3 Details

  • Manufacturer Part Number:

    SIHA25N50E-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    273 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    144 ns

  • Turn-on Time-Max (ton):

    110 ns

SIHA25N50E-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHA25N50E-E3 is a TO-252 (D-PAK) package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • While SIHA25N50E-E3 has a maximum junction temperature of 175°C, it's recommended to derate the power dissipation at high temperatures. Consult the datasheet for thermal impedance and power derating curves.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 10-15 seconds, and avoid excessive thermal stress. Use a solder with a melting point above 217°C.
  • SIHA25N50E-E3 has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures to prevent damage.
  • While SIHA25N50E-E3 is suitable for high-frequency switching, it's essential to consider the device's switching losses, parasitic inductance, and capacitance. Consult the datasheet and application notes for guidance.

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SIHA25N50E-E3 Overview

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