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SIHA690N60E-GE3 - Vishay

Description: MOSFETs TO220 600V 4.3A N-CH MOSFET

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SIHA690N60E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_2022
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SIHA690N60E-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK Thin Lead_2022
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SIHA690N60E-GE3 Details

  • Manufacturer Part Number:

    SIHA690N60E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2019-06-16

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    9 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    29 W

  • Pulsed Drain Current-Max (IDM):

    11 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    82 ns

  • Turn-on Time-Max (ton):

    42 ns

SIHA690N60E-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for SIHA690N60E-GE3 is -40°C to 150°C.
  • Yes, SIHA690N60E-GE3 is designed for high-frequency switching applications up to 100 kHz.
  • The typical turn-on time is around 20 ns, and the typical turn-off time is around 30 ns.
  • Yes, SIHA690N60E-GE3 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper thermal management and synchronization of the gate signals.
  • The recommended gate resistance value for SIHA690N60E-GE3 is between 10 ohms and 20 ohms.

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