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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SIHB125N60EF-GE3
- Part Number SIHB125N60EF-GE3
- Manufacturer Vishay
- Pin Count 999
- Part Category MOSFET (N-Channel)
- Last Modified Date Jul 20, 2024 10:33 PM UTC
- Pinout / Pin List Click Here (Member Only)
SIHB125N60EF-GE3 Details
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Manufacturer Part Number:
SIHB125N60EF-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Package Description:
TO-263, D2PAK-3/2
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ECCN Code:
EAR99
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Factory Lead Time:
20 Weeks
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Date Of Intro:
2020-02-16
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
6
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Avalanche Energy Rating (Eas):
88 mJ
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Case Connection:
DRAIN
SIHB125N60EF-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SIHB125N60EF-GE3 is a TO-247-3L package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm. It's recommended to follow the land pattern recommended by Vishay in their application note AN-1035.
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To ensure the reliability of the SIHB125N60EF-GE3 in high-temperature applications, it's recommended to follow Vishay's guidelines for thermal management, including using a heat sink with a thermal resistance of less than 1°C/W, and ensuring that the maximum junction temperature (Tj) does not exceed 150°C.
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The maximum allowed voltage derating for the SIHB125N60EF-GE3 is 80% of the maximum rated voltage (600V) at high temperatures (above 100°C). This means that the maximum allowed voltage at high temperatures is 480V.
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To protect the SIHB125N60EF-GE3 from electrical overstress (EOS), it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage spikes, and to ensure that the device is operated within its safe operating area (SOA).
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The recommended gate drive voltage for the SIHB125N60EF-GE3 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve the switching performance, but may also increase the power losses.
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SIHB125N60EF-GE3 Overview
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