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SiHB24N65E-GE3 - Vishay

Description: Vishay SiHB24N65E-GE3 N-channel MOSFET Transistor, 24 A, 650 V, 3-Pin D2PAK

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SiHB24N65E-GE3 - Vishay PCB footprint - Other - Other - D2PAK (TO-263)_2022-1
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SiHB24N65E-GE3 Details

  • Manufacturer Part Number:

    SIHB24N65E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    24 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Surface Mount:

    YES

SiHB24N65E-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIHB24N65E-GE3 is a TO-247-3L package with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability, follow the recommended operating temperature range of -55°C to 175°C, and consider using a heat sink or thermal interface material to maintain a safe junction temperature (Tj) below 150°C.
  • The maximum allowed voltage slew rate for the SIHB24N65E-GE3 is 10V/ns, exceeding which may cause the device to malfunction or fail.
  • Yes, you can use multiple SIHB24N65E-GE3 devices in parallel to increase current handling, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized to avoid shoot-through currents.
  • To protect the SIHB24N65E-GE3 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB design includes ESD protection components such as TVS diodes or ESD protection arrays.

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SiHB24N65E-GE3 Overview

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