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SIHF530STRL-GE3 - Vishay

Description: Vishay SIHF530STRL-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK

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PCB Footprints
SIHF530STRL-GE3 - Vishay PCB footprint - Other - Other - D2PAK (TO-263AB)_2020_1
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3D Models
SIHF530STRL-GE3 - Vishay  - 3D model - Other - D2PAK (TO-263AB)_2020_1
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SIHF530STRL-GE3 Details

  • Manufacturer Part Number:

    SIHF530STRL-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    69 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHF530STRL-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIHF530STRL-GE3 is a rectangular pad with a size of 5.3 mm x 3.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Also, make sure the PCB is clean and free of oxidation.
  • The maximum operating temperature range for the SIHF530STRL-GE3 is -55°C to 150°C, with a derating of 1.33% per °C above 125°C.
  • Yes, the SIHF530STRL-GE3 is designed to withstand high-vibration environments, with a vibration rating of 10 G peak acceleration, 10 Hz to 2000 Hz, and 3 axes.
  • Yes, the SIHF530STRL-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the requirements of EU directives 2011/65/EU and 1907/2006/EC, respectively.

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SIHF530STRL-GE3 Overview

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Part Image SIHF530STRR-GE3 Vishay Intertechnologies

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Part Image SIHF530S-GE3 Vishay Siliconix

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Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF530STRL Vishay Intertechnologies

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For a full list of alternate parts for SIHF530STRL-GE3, check out Findchips.com